Equipped with world-class expertise in gallium nitride (GaN)-on-silicon carbide (SiC) technology, RFHIC delivers highly reliable radio frequency (RF) amplifiers and transmitters in collaboration with leading global partners. In the defense sector, the company supplies mission-critical RF components for radar, electronic warfare (EW), communication systems, and soft-kill solutions. Leveraging GaN’s high power-density, thermal robustness, and wideband performance. RFHIC meets the demands of future battlefield environments.
Going beyond defense and telecommunications, RFHIC has expanded into non-communication RF markets, including RF energy solutions and plasma RF generators for semiconductor equipment, as well as RF-based industrial heating, and medical applications.
Operating a U.S. subsidiary located in North Carolina, RFHIC serves customers in more than 40 countries worldwide. Through its vertically integrated value chain from RF power devices to modules, transmitters, and microwave generators, RFHIC ensures rapid delivery of customized, high-power RF solutions that strengthen competitiveness and innovation for its partners.
GaN Power Amplifiers
Featuring high-power wideband performance and excellent efficiency, RFHIC’s GaN Power amplifiers (RRP131K0-10) are ideal for use in various types of RF equipment such as radar and communications systems.
Transmitter Systems
As a turnkey solution for supporting highly reliable RF transmission, RFHIC’s transmitter systems (Part. No. RRK202405K0-680) are applicable for radar, communication systems and other military equipment. They are specially designed to incorporate GaN-based high-power technology.
GaN Wideband Amplifiers
RFHIC’s GaN wideband amplifiers (Part No. RWP2060080-50) are characterized by high-power, and fast switching performance within the wide frequency band ranging from 2 to 6 GHz. As a result, they are suitable for use in electronic warfare and jamming equipment.
Among RFHIC’s key export items are GaN solid-state microwave generators. Featuring high-efficiency, and precise supply of RF energy, they are widely applicable to the plasma, raw material processing and industrial heating fields.
The company’s GaN transistor is a key element based on GaN-on-Sic technology, essential for high-power, high-efficiency RF amplifiers that provide stable performance within radar and communications systems.
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