Samsung Elec Unveils World’s LargestCapacity V-NAND Chip and New SSD world’s largest memory chip maker Samsung Electronics Co. unveiled its new Vertical NAND (V-NAND) flash memory with the world’s biggest storage capacity of 1-Terabit (Tb) along with next-generation solid state drive (SSD) solutions.

At the Flash Memory Summit 2017 recently held at the Santa Clara (CA) Convention Center, Samsung Electronics presented its new 1-Tb V-NAND chip.

V-NAND is the flash memory technology used in data storage devices including mobile phones and digital cameras. The V-NAND in a stacked structure can provide higher single-die density than those with 2-dimensional (2D) cellarrays, and demand for it is growing rapidly along with rising applications of artificial intelligence and Internet of Things (IoT).

The company said in a statement that with the new 1-Tb V-NAND chip that boasts twice larger storage capacity than the existing 512-Gigabit (Gb) chip, it is possible to construct2-Terabyte (TB) memory in a single V-NAND package by stacking 16 1Tb dies.

Considering that 1 Tb is equal to 128 GB, and a typical two-hour-long HD movie takes up 1.5 to 2 GB of memory capacity, about 60 to 70 movies can be stored in a single V-NAND chip.



Samsung aims to introduce the world’s largest-capacity SSD applying 1-Tb V-NAND memory technology next year. At the summit, Samsung Electronics also presented its new SSD technology, dubbed Next Generation Small Form Factor (NGSFF) SSD, which is expected to dramatically improve the memory storage capacity. With the new NGSFF SSD, four times larger memory storage capacity can be secured in the same server, so data centers and customers using the server can build more efficient system, according to Samsung, said Samsung. The company plans to begin mass producing it in the fourth quarter of this year.

An SSD is a storage device that can replace a hard disk drive (HDD). It uses high-speed memory semiconductors such as NAND flash memory or dynamic random access memory (DRAM) chips for storage that ensure high processing speed, low heating and little noise.

<Source : KITA> | Blog Magazine of korean electronics, brands and Goods

Samsung Mass-Produces DDR4 Modules


Samsung Electronics will open a new era for DRAM memory for PCs and enterprise server systems in the second half of this year. The next generation of DRAM memory has begun as South Korea-based electronics giant initiated the world’s first mass-production of ultra-thin mobile memory chips based on 20-nanometer-level technology.

Samsung Electronics recently announced that it will be mass-producing 20 nano-level 16 GB (Gigabyte) and 32GB DDR4 RAM modules for enterprise servers in next-generation data centers. The new DDR4 memory is highlighted by a 1.25-fold increase in data transmission rate and 30 percent cut in power consumption compared to the existing 20nm-class DDR3. This means the new memory will speed up a computer’s boot time. Samsung is confident that its modules support up to 2,667Mbps transfer speeds. The process of replacing DDR3 into DDR4 will begin in the second half of this year, enhancing performance and lowering power consumption.


By Kim Min-su : Here